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1

A Temperature Independent Effect of Near-Interface Traps in 4H-SiC MOS Capacitors

Pande, Peyush, Dimitrijev, Sima, Haasmann, Daniel, Moghadam, Hamid Amini, Tanner, Philip, Han, Ji Sheng

Journal:

Materials Science Forum

Année:

2019

Langue:

english

Fichier:

PDF, 1.48 MB

english, 2019

2

Electrical characterization of SiC MOS capacitors: A critical review

Pande, Peyush, Haasmann, Daniel, Han, Jisheng, Moghadam, Hamid Amini, Tanner, Philip, Dimitrijev, Sima

Journal:

Microelectronics Reliability

Année:

2020

Fichier:

PDF, 914 KB

2020

3

Employing reduced surface field technique by a P-type region in 4H-SiC metal semiconductor field effect transistors for increasing breakdown voltage

Hamid Amini Moghadam, Ali A. Orouji, S. E. Jamali Mahabadi

Journal:

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

Année:

2012

Langue:

english

Fichier:

PDF, 1.58 MB

english, 2012

4

[IEEE 2011 International Conference on Signal Processing, Communication, Computing and Networking Technologies (ICSCCN) - Thuckalay, Tamil Nadu, India (2011.07.21-2011.07.22)] 2011 International Conference on Signal Processing, Communication, Computing and Networking Technologies - Combination of a 4H-SiC MESFET with a 4H-SiC MOSFET to realize a high voltage MOSFET

Hamid Amini Moghadam,, Jamali Mahabadi, S. E., Rajabi, Saba

Année:

2011

Langue:

english

Fichier:

PDF, 351 KB

english, 2011

5

Active defects in MOS devices on 4H-SiC: A critical review

Amini Moghadam, Hamid, Dimitrijev, Sima, Han, Jisheng, Haasmann, Daniel

Journal:

Microelectronics Reliability

Année:

2016

Langue:

english

Fichier:

PDF, 1.51 MB

english, 2016

6

Direct Measurement of Active Near-interface Traps in the Strong-Accumulation Region of 4H-SiC MOS Capacitors

Pande, Peyush, Dimitrijev, Sima, Haasmann, Daniel, Moghadam, Hamid Amini, Tanner, Philip, Han, Jisheng

Journal:

IEEE Journal of the Electron Devices Society

Année:

2018

Langue:

english

Fichier:

PDF, 667 KB

english, 2018

7

Energy-Localized Near-Interface Traps Active in the Strong-Accumulation Region of 4H-SiC MOS Capacitors

Pande, Peyush, Dimitrijev, Sima, Haasmann, Daniel, Moghadam, Hamid Amini, Tanner, Philip, Han, Jisheng

Journal:

IEEE Transactions on Electron Devices

Année:

2019

Fichier:

PDF, 8 KB

2019

8

A Simple Equation for the Energy Stored by Voltage-Dependent Capacitances

Jadli, Utkarsh, Mohd-Yasin, Faisal, Moghadam, Hamid Amini, Nicholls, Jordan R., Pande, Peyush, Dimitrijev, Sima

Journal:

IEEE Transactions on Power Electronics

Année:

2020

Fichier:

PDF, 812 KB

2020

9

Electrical Characterization of SiC MOS Capacitors: A Critical Review

Pande, Peyush, Haasmann, Daniel, Han, Jisheng, Moghadam, Hamid Amini, Tanner, Philip, Dimitrijev, Sima

Journal:

Solid-State Electronics

Année:

2020

Fichier:

PDF, 1.24 MB

2020

10

Measurement of Power Dissipation Due to Parasitic Capacitances of Power MOSFETs

Jadli, Utkarsh, Mohd-Yasin, Faisal, Moghadam, Hamid Amini, Pande, Peyush, Nicholls, Jordan R., Dimitrijev, Sima

Journal:

Année:

2020

Fichier:

PDF, 1.62 MB

2020

11

Double window partial SOI-LDMOSFET: A novel device for breakdown voltage improvement

Ali A. Orouji, Hamid Amini Moghadam, A. Dideban

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Année:

2010

Langue:

english

Fichier:

PDF, 1.17 MB

english, 2010

12

Design and performance considerations of novel 4H–SiC MESFET with a p-type pillar for increasing breakdown voltage

Hamid Amini Moghadam, Ali A. Orouji

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Année:

2011

Langue:

english

Fichier:

PDF, 614 KB

english, 2011

13

A novel 4H–SiC SOI-MESFET with a modified breakdown voltage mechanism for improving the electrical performance

Moghadam, Hamid Amini, Orouji, Ali A, Dideban, A

Journal:

Semiconductor Science and Technology

Année:

2012

Langue:

english

Fichier:

PDF, 1.62 MB

english, 2012

14

A new partial SOI-LDMOSFET with a modified buried oxide layer for improving self-heating and breakdown voltage

Jamali Mahabadi, S E, Orouji, Ali A, Keshavarzi, P, Moghadam, Hamid Amini

Journal:

Semiconductor Science and Technology

Année:

2011

Langue:

english

Fichier:

PDF, 1.98 MB

english, 2011

15

[IEEE 2011 International Conference on Signal Processing, Communication, Computing and Networking Technologies (ICSCCN) - Thuckalay, Tamil Nadu, India (2011.07.21-2011.07.22)] 2011 International Conference on Signal Processing, Communication, Computing and Networking Technologies - A novel step buried oxide Partial SOI LDMOSFET with Triple Drift layer

Jamali Mahabadi, S. E., Orouji, Ali A., Keshavarzi, Parviz, Rajabi, Saba, Hamid Amini Moghadam,, Maryam Iranian Pour Haghighi,

Année:

2011

Langue:

english

Fichier:

PDF, 1.38 MB

english, 2011

16

[IEEE 2011 International Conference on Signal Processing, Communication, Computing and Networking Technologies (ICSCCN) - Thuckalay, Tamil Nadu, India (2011.07.21-2011.07.22)] 2011 International Conference on Signal Processing, Communication, Computing and Networking Technologies - A novel AlGaN/GaN/AlGaN double-heterojunction high electron mobility transistor for performance improvement

Rajabi, Saba, Orouji, Ali A., Moghadam, Hamid Amini, Mahabadi, S. E. Jamali, Fathipour, Morteza

Année:

2011

Langue:

english

Fichier:

PDF, 936 KB

english, 2011

17

Magnetic ion imprinted polymer nanoparticles for the preconcentration of vanadium(IV) ions

Aliakbari, Azam, Amini, Mostafa M., Mehrani, Kheirollah, Zadeh, Hamid Reza Moghadam

Journal:

Microchimica Acta

Année:

2014

Langue:

english

Fichier:

PDF, 686 KB

english, 2014

18

[IEEE 2011 International Conference on Signal Processing, Communication, Computing and Networking Technologies (ICSCCN) - Thuckalay, Tamil Nadu, India (2011.07.21-2011.07.22)] 2011 International Conference on Signal Processing, Communication, Computing and Networking Technologies - A novel power High Electron Mobility Transistor with partial stepped recess in the drain access region for performance improvement

Rajabi, Saba, Orouji, Ali A., Moghadam, Hamid Amini, Mahabadi, S. E. Jamali, Fathipour, Morteza

Année:

2011

Langue:

english

Fichier:

PDF, 809 KB

english, 2011

19

[IEEE 2011 International Conference on Signal Processing, Communication, Computing and Networking Technologies (ICSCCN) - Thuckalay, Tamil Nadu, India (2011.07.21-2011.07.22)] 2011 International Conference on Signal Processing, Communication, Computing and Networking Technologies - A novel double field-plate power high electron mobility transistor based on AlGaN/GaN for performance improvement

Rajabi, Saba, Orouji, Ali A., Moghadam, Hamid Amini, Mahabadi, S. E. Jamali, Fathipour, Morteza

Année:

2011

Langue:

english

Fichier:

PDF, 1.45 MB

english, 2011

20

Impact of Interface Traps on Current-Voltage Characteristics of 4H-SiC Schottky-Barrier Diodes

Amini Moghadam, Hamid, Dimitrijev, Sima, Han, Ji Sheng

Journal:

Materials Science Forum

Année:

2014

Langue:

english

Fichier:

PDF, 1.35 MB

english, 2014

21

[IEEE 2011 IEEE International Conference on Computer Science and Automation Engineering (CSAE) - Shanghai, China (2011.06.10-2011.06.12)] 2011 IEEE International Conference on Computer Science and Automation Engineering - 4H-SiC SOI-MESFET with a step in buried oxide for improving electrical performance

Amini Moghadam, Hamid, Orouji, Ali A., Jamali Mahabadi, S. E.

Année:

2011

Fichier:

PDF, 364 KB

2011

22

Selection of SPICE Parameters and Equations for Effective Simulation of Circuits with 4H-SiC Power MOSFETs

Tanner, Philip, Dimitrijev, Sima, Amini Moghadam, Hamid, Aminbeidokhti, Amirhossein, Han, Ji Sheng

Journal:

Materials Science Forum

Année:

2014

Langue:

english

Fichier:

PDF, 311 KB

english, 2014

23

Power-switching applications beyond silicon: Status and future prospects of SiC and GaN devices

Dimitrijev, Sima, Han, Jisheng, Moghadam, Hamid Amini, Aminbeidokhti, Amirhossein

Journal:

Année:

2015

Langue:

english

Fichier:

PDF, 729 KB

english, 2015

24

Investigation of the novel attributes in double recessed gate SiC MESFETs at drain side

Orouji, Ali A, Razavi, S M, Hosseini, Seyed Ebrahim, Moghadam, Hamid Amini

Journal:

Semiconductor Science and Technology

Année:

2011

Langue:

english

Fichier:

PDF, 429 KB

english, 2011

25

Comprehensive study of a 4H–SiC MES–MOSFET

Jamali Mahabadi, S.E., Amini Moghadam, Hamid

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Année:

2015

Langue:

english

Fichier:

PDF, 2.11 MB

english, 2015

26

Transient-Current Method for Measurement of Active Near-Interface Oxide Traps in 4H-SiC MOS Capacitors and MOSFETs

Moghadam, Hamid Amini, Dimitrijev, Sima, Han, Jisheng, Haasmann, Daniel, Aminbeidokhti, Amirhossein

Journal:

IEEE Transactions on Electron Devices

Année:

2015

Langue:

english

Fichier:

PDF, 1.00 MB

english, 2015

27

Synthesis and biological evaluation of 5-benzylidenerhodanine-3-acetic acid derivatives as AChE and 15-LOX inhibitors

Shafii, Negah, Khoobi, Mehdi, Amini, Mohsen, Sakhteman, Amirhossein, Nadri, Hamid, Moradi, Alireza, Emami, Saeed, Saeedian Moghadam, Ebrahim, Foroumadi, Alireza, Shafiee, Abbas

Journal:

Journal of Enzyme Inhibition and Medicinal Chemistry

Année:

2015

Langue:

english

Fichier:

PDF, 1.05 MB

english, 2015

28

Dithizone modified graphene oxide nanosheet as a sorbent for pre-concentration and determination of cadmium and lead ions in food

Moghadam Zadeh, Hamid Reza, Ahmadvand, Parvaneh, Behbahani, Ali, Amini, Mostafa M., Sayar, Omid

Journal:

Food Additives & Contaminants Part A

Année:

2015

Langue:

english

Fichier:

PDF, 1.05 MB

english, 2015

29

A method for extraction of electron mobility in power HEMTs

Aminbeidokhti, Amirhossein, Dimitrijev, Sima, Han, Jisheng, Xu, Xiangang, Wang, Chengxin, Qu, Shuang, Amini Moghadam, Hamid, Tanner, Philip, Massoubre, David, Walker, Glenn

Journal:

Superlattices and Microstructures

Année:

2015

Langue:

english

Fichier:

PDF, 703 KB

english, 2015

30

Gate-Voltage Independence of Electron Mobility in Power AlGaN/GaN HEMTs

Aminbeidokhti, Amirhossein, Dimitrijev, Sima, Kumar Hanumanthappa, Anil, Amini Moghadam, Hamid, Haasmann, Daniel, Han, Jisheng, Shen, Yan, Xu, Xiangang

Journal:

IEEE Transactions on Electron Devices

Année:

2016

Langue:

english

Fichier:

PDF, 2.28 MB

english, 2016

31

[IEEE 2010 IEEE Region 8 International Conference on "Computational Technologies in Electrical and Electronics Engineering" (SIBIRCON 2010) - Irkutsk, Russia (2010.07.11-2010.07.15)] 2010 IEEE Region 8 International Conference on Computational Technologies in Electrical and Electronics Engineering (SIBIRCON) - Comparative study of buried insulator materials in LDMOSFETs

Moghadam, Hamid Amini, Orouji, Ali A., Dideban, A.

Année:

2010

Langue:

english

Fichier:

PDF, 488 KB

english, 2010

32

[IEEE 2011 IEEE International Conference on Computer Science and Automation Engineering (CSAE) - Shanghai, China (2011.06.10-2011.06.12)] 2011 IEEE International Conference on Computer Science and Automation Engineering - A new method for improving breakdown voltage in PSOI MOSFETs using variable drift region doping concentration

Mahabadi, S. E. Jamali, Orouji, Ali A., Moghadam, Hamid Amini, Keshavarzi, Parviz

Année:

2011

Langue:

english

Fichier:

PDF, 390 KB

english, 2011

33

Dipole Type Behavior of NO Grown Oxides on 4H–SiC

Haasmann, Daniel, Amini Moghadam, Hamid, Han, Ji Sheng, Aminbeidokhti, Amirhossein, Iacopi, Alan, Dimitrijev, Sima

Journal:

Materials Science Forum

Année:

2016

Langue:

english

Fichier:

PDF, 385 KB

english, 2016

34

Quantified Density of Active near Interface Oxide Traps in 4H-SiC MOS Capacitors

Amini Moghadam, Hamid, Dimitrijev, Sima, Han, Ji Sheng, Aminbeidokhti, Amirhossein, Haasmann, Daniel

Journal:

Materials Science Forum

Année:

2016

Langue:

english

Fichier:

PDF, 1.23 MB

english, 2016

35

The Effect of Charge Redistribution on Flat-Band Voltage Turnaround in 4H-SiC MOS Capacitors

Moghadam, Hamid Amini, Dimitrijev, Sima, Han, Ji Sheng, Haasmann, Daniel

Journal:

Materials Science Forum

Année:

2017

Langue:

english

Fichier:

PDF, 586 KB

english, 2017

36

Synthesis, docking study and neuroprotective effects of some novel pyrano[3,2- c ]chromene derivatives bearing morpholine/phenylpiperazine moiety

Sameem, Bilqees, Saeedi, Mina, Mahdavi, Mohammad, Nadri, Hamid, Moghadam, Farshad Homayouni, Edraki, Najmeh, Khan, Muhammad Imran, Amini, Mohsen

Journal:

Bioorganic & Medicinal Chemistry

Année:

2017

Langue:

english

Fichier:

PDF, 1.23 MB

english, 2017

37

Synthesis and neuroprotective activity of novel 1,2,4-triazine derivatives with ethyl acetate moiety against H 2 O2 and Aβ-induced neurotoxicity

Tuylu Kucukkilinc, Tuba, Safari Yanghagh, Kamaledin, Ayazgok, Beyza, Ali Roknipour, Mohammad, Homayouni Moghadam, Farshad, Moradi, Alireza, Emami, Saeed, Amini, Mohsen, Irannejad, Hamid

Journal:

Medicinal Chemistry Research

Année:

2017

Langue:

english

Fichier:

PDF, 2.15 MB

english, 2017

38

Binding site identification of anticancer drug Gefitinib to HSA and DNA in the presence of five different probes

Tanzadehpanah, Hamid, Mahaki, Hanie, Moghadam, Neda Hosseinpour, Salehzadeh, Sadegh, Rajabi, Omid, Najafi, Rezvan, Amini, Razieh, Saidijam, Massoud

Journal:

Journal of Biomolecular Structure and Dynamics

Année:

2018

Langue:

english

Fichier:

PDF, 1.21 MB

english, 2018

39

Mechanism of Threshold Voltage Shift in p -GaN Gate AlGaN/GaN Transistors

Tang, Xi, Li, Baikui, Moghadam, Hamid Amini, Tanner, Philip, Han, Jisheng, Dimitrijev, Sima

Journal:

IEEE Electron Device Letters

Année:

2018

Langue:

english

Fichier:

PDF, 425 KB

english, 2018

40

Effect of hole-injection on leakage degradation in a p-GaN gate AlGaN/GaN power transistor

Tang, Xi, Li, Baikui, Moghadam, Hamid Amini, Tanner, Philip, Han, Jisheng, Dimitrijev, Sima

Journal:

IEEE Electron Device Letters

Année:

2018

Langue:

english

Fichier:

PDF, 719 KB

english, 2018

41

Mechanism of leakage current increase in p-GaN gate AlGaN/GaN power devices induced by ON-state gate bias

Tang, Xi, Li, Baikui, Moghadam, Hamid Amini, Tanner, Philip, Han, Jisheng, Li, Hui, Dimitrijev, Sima, Wang, Jiannong

Journal:

Japanese Journal of Applied Physics

Année:

2018

Langue:

english

Fichier:

PDF, 773 KB

english, 2018

42

Dependence of offset voltage in AlGaN/GaN van der Pauw devices under mechanical strain

Nguyen, Hong-Quan, Moghadam, Hamid Amini, Dinh, Toan, Phan, Hoang-Phuong, Nguyen, Tuan-Khoa, Han, Jisheng, Dimitrijev, Sima, Nguyen, Nam-Trung, Dao, Dzung Viet

Journal:

Materials Letters

Année:

2019

Langue:

english

Fichier:

PDF, 1.76 MB

english, 2019

43

Impact of carrier injections on the threshold voltage in p-GaN gate AlGaN/GaN power HEMTs

Li, Baikui, Tang, Xi, Li, Hui, Moghadam, Hamid Amini, Zhang, Zhaofu, Han, Jisheng, Nguyen, Nam-trung, Dimitrijev, Sima, Wang, Jiannong

Journal:

Applied Physics Express

Année:

2019

Langue:

english

Fichier:

PDF, 814 KB

english, 2019

44

Design, synthesis, and evaluation of novel cinnamic acid-tryptamine hybrid for inhibition of acetylcholinesterase and butyrylcholinesterase

Ghafary, Shahrzad, Ghobadian, Roshanak, Mahdavi, Mohammad, Nadri, Hamid, Moradi, Alireza, Akbarzadeh, Tahmineh, Najafi, Zahra, Sharifzadeh, Mohammad, Edraki, Najmeh, Moghadam, Farshad Homayouni, Amini

Journal:

DARU Journal of Pharmaceutical Sciences

Année:

2020

Fichier:

PDF, 756 KB

2020

45

The Correct Equation for the Current Through Voltage-Dependent Capacitors

Jadli, Utkarsh, Mohd-Yasin, Faisal, Moghadam, Hamid Amini, Nicholls, Jordan R., Pande, Peyush, Dimitrijev, Sima

Journal:

Année:

2020

Fichier:

PDF, 3.92 MB

2020

46

A Comparison of Active Near-Interface Traps in Nitrided and As-Grown Gate Oxides by the Direct Measurement Technique

Pande, Peyush, Dimitrijev, Sima, Haasmann, Daniel, Moghadam, Hamid Amini, Tanner, Philip, Han, Ji Sheng

Journal:

Materials Science Forum

Année:

2020

Fichier:

PDF, 3.06 MB

2020